JANTXV1N6625U Microsemi Corporation
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A D-5A
Qualification: MIL-PRF-19500/585
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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Technische Details JANTXV1N6625U Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A D-5A, Qualification: MIL-PRF-19500/585, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 60 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Bulk.