Jantxv2N1613 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.5A TO39
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Qualification: MIL-PRF-19500/181
Grade: Military
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Technische Details Jantxv2N1613 Microchip Technology
Description: TRANS NPN 30V 0.5A TO39, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Active, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Qualification: MIL-PRF-19500/181, Grade: Military.
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|---|---|---|---|---|---|
| Jantxv2N1613 | Microchip / Microsemi |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 30V 500mA 800mW NPN Power BJT THT
Bipolar Transistors - BJT 30V 500mA 800mW NPN Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH