JANTXV2N2219A

JANTXV2N2219A Microchip / Microsemi


8917-lds-0091-datasheet Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
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Technische Details JANTXV2N2219A Microchip / Microsemi

Description: TRANS NPN 50V 0.8A TO205AD, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-205AD, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/251.

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JANTXV2N2219A Hersteller : MICROSEMI 8917-lds-0091-datasheet TO-39NPN TRANSISTOR
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JANTXV2N2219A JANTXV2N2219A Hersteller : Microchip Technology 8917-lds-0091-datasheet Description: TRANS NPN 50V 0.8A TO205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-205AD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar