JANTXV2N2222AUB/TR Microchip / Microsemi
Hersteller: Microchip / MicrosemiBipolar Transistors - BJT 40V 800mA 500mW 3 Pin CER Small-Signal BJT TR
auf Bestellung 203 Stücke:
Lieferzeit 366-370 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.92 EUR |
| 100+ | 11.32 EUR |
| 250+ | 11.26 EUR |
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Technische Details JANTXV2N2222AUB/TR Microchip / Microsemi
Description: TRANS NPN 50V 0.8A UB, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/255.
Weitere Produktangebote JANTXV2N2222AUB/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| JANTXV2N2222AUB/TR | Hersteller : Microchip Technology |
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB T/R |
Produkt ist nicht verfügbar |
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JANTXV2N2222AUB/TR | Hersteller : Microchip Technology |
Description: TRANS NPN 50V 0.8A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |