Jantxv2N2484

Jantxv2N2484 Microchip / Microsemi


LDS_0058-1593908.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT BJTs
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+35.85 EUR
10+ 35.83 EUR
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Technische Details Jantxv2N2484 Microchip / Microsemi

Description: TRANS NPN 60V 0.05A TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V, Supplier Device Package: TO-18, Grade: Military, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 360 mW, Qualification: MIL-PRF-19500/376.

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JANTXV2N2484 Hersteller : Semicoa Semiconductors 10prf19500ss376.pdf Trans GP BJT NPN 60V 0.05A 360mW 3-Pin TO-18
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JANTXV2N2484 JANTXV2N2484 Hersteller : Microchip Technology lds-0058.pdf Trans GP BJT NPN 60V 0.05A 360mW 3-Pin TO-18
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Jantxv2N2484 Jantxv2N2484 Hersteller : Microchip Technology 6027-2n2484-datasheet Description: TRANS NPN 60V 0.05A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: TO-18
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar