JANTXV2N2484P Microchip Technology
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Current - Collector Cutoff (Max): 2nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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Technische Details JANTXV2N2484P Microchip Technology
Description: SMALL-SIGNAL BJT, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 50 mA, Supplier Device Package: TO-18 (TO-206AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V, Current - Collector Cutoff (Max): 2nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk.
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|---|---|---|---|---|---|
| JANTXV2N2484P | Microchip / Microsemi |
 Bipolar Transistors - BJT 60V 50mA 360mW PinD Test NPN Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTXV2N2484P |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 60V 50mA 360mW PinD Test NPN Small-Signal BJT THT
Bipolar Transistors - BJT 60V 50mA 360mW PinD Test NPN Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH