Technische Details JANTXV2N2857UB Microsemi
Description: RF TRANS NPN 15V 0.04A UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 21dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V, Noise Figure (dB Typ @ f): 4.5dB @ 450MHz, Supplier Device Package: UB, Part Status: Obsolete.
Weitere Produktangebote JANTXV2N2857UB
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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JANTXV2N2857UB | Hersteller : Semicoa |
 RF Transistor, NPN, Silicon, Low Power |
Produkt ist nicht verfügbar |
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| JANTXV2N2857UB | Hersteller : MICROSEMI |
UB/NPN Transistor 2N2857 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JANTXV2N2857UB | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 15V 0.04A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 21dB Power - Max: 200mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Supplier Device Package: UB Part Status: Obsolete |
Produkt ist nicht verfügbar |