Jantxv2N2906AUA Microchip Technology
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: 4-SMD
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/291
Grade: Military
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Technische Details Jantxv2N2906AUA Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 600 mA, Part Status: Active, Supplier Device Package: 4-SMD, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Packaging: Bulk, Qualification: MIL-PRF-19500/291, Grade: Military.
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| Jantxv2N2906AUA | Microchip / Microsemi |
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Bipolar Transistors - BJT 40V 600mA 400mW PNP Small-Signal BJT SMT
Bipolar Transistors - BJT 40V 600mA 400mW PNP Small-Signal BJT SMT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH