JANTXV2N3439L
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auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details JANTXV2N3439L
Description: TRANS NPN 350V 1A TO5, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-5, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Qualification: MIL-PRF-19500/368, Grade: Military, Current - Collector Cutoff (Max): 2µA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote JANTXV2N3439L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JANTXV2N3439L | Microchip Technology |
Description: TRANS NPN 350V 1A TO5 Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Qualification: MIL-PRF-19500/368 Grade: Military Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 109 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTXV2N3439L | Microchip / Microsemi |
Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JANTXV2N3439L |
|
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Qualification: MIL-PRF-19500/368
Grade: Military
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Qualification: MIL-PRF-19500/368
Grade: Military
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 109 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV2N3439L |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT THT
Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH