JANTXV2N3439L
Hersteller: auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details JANTXV2N3439L
Description: TRANS NPN 350V 1A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: TO-5, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/368.
Weitere Produktangebote JANTXV2N3439L
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JANTXV2N3439L | Hersteller : Microchip Technology |
Description: TRANS NPN 350V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
Produkt ist nicht verfügbar |
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| JANTXV2N3439L | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT 350 V Power BJT |
Produkt ist nicht verfügbar |