Technische Details JANTXV2N3637 MICROSEMI
Description: TRANS PNP 175V 1A TO-39, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk, Qualification: MIL-PRF-19500/357, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 175 V, Current - Collector (Ic) (Max): 1 A, Grade: Military, Supplier Device Package: TO-39.
Weitere Produktangebote JANTXV2N3637
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JANTXV2N3637 | Microchip Technology |
 Description: TRANS PNP 175V 1A TO-39DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/357 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 175 V Current - Collector (Ic) (Max): 1 A Grade: Military Supplier Device Package: TO-39 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 101 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTXV2N3637 | Microchip / Microsemi |
Bipolar Transistors - BJT 175 V Small-Signal BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 101 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTXV2N3637 |
|
Hersteller: Microchip Technology
Description: TRANS PNP 175V 1A TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/357
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Grade: Military
Supplier Device Package: TO-39
Description: TRANS PNP 175V 1A TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/357
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Current - Collector (Ic) (Max): 1 A
Grade: Military
Supplier Device Package: TO-39
Produkt ist nicht verfügbar
Mindestbestellmenge: 101 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV2N3637 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 175 V Small-Signal BJT
Bipolar Transistors - BJT 175 V Small-Signal BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 101 Stücke
Im Einkaufswagen
Stück im Wert von UAH