Jantxv2N3766 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 60V 4A TO66
Qualification: MIL-PRF-19500/518
Grade: Military
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Power - Max: 25 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Current - Collector Cutoff (Max): 500µA
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Technische Details Jantxv2N3766 Microchip Technology
Description: TRANS NPN 60V 4A TO66, Qualification: MIL-PRF-19500/518, Grade: Military, Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Bulk, Power - Max: 25 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 4 A, Part Status: Active, Supplier Device Package: TO-66 (TO-213AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Current - Collector Cutoff (Max): 500µA.
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|---|---|---|---|---|---|
| Jantxv2N3766 | Microchip / Microsemi |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 60V 4A NPN Power BJT THT
Bipolar Transistors - BJT 60V 4A NPN Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
