JANTXV2N3999 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 80V 10A TO59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-59
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Technische Details JANTXV2N3999 Microchip Technology
Description: TRANS NPN 80V 10A TO59, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Stud Mount, Package / Case: TO-210AA, TO-59-4, Stud, Packaging: Bulk, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 10 A, Supplier Device Package: TO-59.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JANTXV2N3999 | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
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