Technische Details JANTXV2N4957 Microsemi
Description: RF TRANS PNP 30V 30MA TO72, Packaging: Bulk, Package / Case: TO-72-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 25dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 30V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V, Noise Figure (dB Typ @ f): 3.5dB @ 450MHz, Supplier Device Package: TO-72.
Weitere Produktangebote JANTXV2N4957
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JANTXV2N4957 | Hersteller : Microchip Technology |
 Trans RF BJT PNP 30V 0.03A 200mW Bag |
Produkt ist nicht verfügbar |
||
 |
JANTXV2N4957 | Hersteller : Microsemi Corporation |
Description: RF TRANS PNP 30V 30MA TO72 Packaging: Bulk Package / Case: TO-72-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Gain: 25dB Power - Max: 200mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Supplier Device Package: TO-72 |
Produkt ist nicht verfügbar |