Technische Details JANTXV2N6301 MOTOROLA
Description: TRANS PNP DARL 80V 8A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V, Supplier Device Package: TO-66, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 75 W.
Weitere Produktangebote JANTXV2N6301
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| JANTXV2N6301 | Hersteller : Microsemi |
 Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray |
Produkt ist nicht verfügbar |
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JANTXV2N6301 | Hersteller : Microchip Technology |
Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray |
Produkt ist nicht verfügbar |
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JANTXV2N6301 | Hersteller : Microchip Technology |
Description: TRANS PNP DARL 80V 8A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
Produkt ist nicht verfügbar |