JANTXV2N6782U Microsemi Corporation


125241-lds-0064-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A 18ULCC
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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Technische Details JANTXV2N6782U Microsemi Corporation

Description: MOSFET N-CH 100V 3.5A 18ULCC, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 18-ULCC (9.14x7.49), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 800mW (Ta), 15W (Tc), Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 18-CLCC, Packaging: Bulk.