JANTXV2N930 MICROSEMI
Hersteller: MICROSEMITO-18/NPN LOW POWER SILICON TRANSISTOR JANTXV2N930
Anzahl je Verpackung: 1 Stücke
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Technische Details JANTXV2N930 MICROSEMI
Description: TRANS NPN 45V 0.03A TO-18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V, Supplier Device Package: TO-18, Grade: Military, Current - Collector (Ic) (Max): 30 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 300 mW, Qualification: MIL-PRF-19500/253.
Weitere Produktangebote JANTXV2N930
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JANTXV2N930 | Hersteller : Microchip Technology |
Description: TRANS NPN 45V 0.03A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Supplier Device Package: TO-18 Grade: Military Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Qualification: MIL-PRF-19500/253 |
Produkt ist nicht verfügbar |
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| JANTXV2N930 | Hersteller : Microchip Technology |
Bipolar Transistors - BJT BJTs |
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