JANTXVR2N2907AUB/TR Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
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Technische Details JANTXVR2N2907AUB/TR Microchip Technology
Description: RH SMALL-SIGNAL BJT, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 600 mA, Part Status: Active, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Tape & Reel (TR).
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 60V 600mA 500mW PNP 3 Pin CER RH Small-Signal BJT TR
Bipolar Transistors - BJT 60V 600mA 500mW PNP 3 Pin CER RH Small-Signal BJT TR
Produkt ist nicht verfügbar
Mindestbestellmenge: 143 Stücke
Im Einkaufswagen
Stück im Wert von UAH