K4F6E3S4HM-MGCJ Samsung Semiconductor, Inc.
Hersteller: Samsung Semiconductor, Inc.
Description: LPDDR4 16Gb x32 3733 Mbps 1.1v
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.1V
Clock Frequency: 1866 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 16Gb x32 3733 Mbps 1.1v
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 1.1V
Clock Frequency: 1866 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
auf Bestellung 2560 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1280+ | 14.26 EUR |
| 2560+ | 14.1 EUR |
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Technische Details K4F6E3S4HM-MGCJ Samsung Semiconductor, Inc.
Description: LPDDR4 16Gb x32 3733 Mbps 1.1v, Packaging: Tray, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Gbit, Memory Type: Volatile, Operating Temperature: -25°C ~ 85°C, Voltage - Supply: 1.1V, Clock Frequency: 1866 MHz, Memory Format: DRAM, Memory Interface: Parallel, Memory Organization: 512M x 32, DigiKey Programmable: Not Verified.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| K4F6E3S4HM-MGCJ | Hersteller : Samsung |
auf Bestellung 11200 Stücke: Lieferzeit 21-28 Tag (e) |