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KSA1010Y Samsung

ksa1010-d.pdf
Hersteller: Samsung

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Technische Details KSA1010Y Samsung

Description: TRANS PNP 100V 7A TO220-3, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 7 A, Supplier Device Package: TO-220-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.

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KSA1010Y KSA1010Y onsemi ksa1010-d.pdf Description: TRANS PNP 100V 7A TO220-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1010Y ksa1010-d.pdf
KSA1010Y
Hersteller: onsemi
Description: TRANS PNP 100V 7A TO220-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH