KSA1013OBU onsemi
Hersteller: onsemi
Description: TRANS PNP 160V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
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Technische Details KSA1013OBU onsemi
Description: TRANS PNP 160V 1A TO-92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 900 mW.
Weitere Produktangebote KSA1013OBU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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KSA1013OBU | onsemi |
Description: TRANS PNP 160V 1A TO-92-3 Power - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KSA1013OBU |
|
Hersteller: onsemi
Description: TRANS PNP 160V 1A TO-92-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 160V 1A TO-92-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH