KSC1008GTA ON Semiconductor / Fairchild
auf Bestellung 3175 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details KSC1008GTA ON Semiconductor / Fairchild
Description: TRANS NPN 60V 0.7A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Weitere Produktangebote KSC1008GTA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| KSC1008GTA | Hersteller : ONSEMI |
 Description: ONSEMI - KSC1008GTA - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 104029 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC1008GTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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KSC1008GTA | Hersteller : onsemi |
Description: TRANS NPN 60V 0.7A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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KSC1008GTA | Hersteller : onsemi |
Description: TRANS NPN 60V 0.7A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |