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KSC2316YTA ON Semiconductor


KSC2316_ONS.pdf
Hersteller: ON Semiconductor
Транзистор NPN, Ptot, Вт = 0,9, Uceo, В = 120, Тип монт. = smd, ft, МГц = 120, hFE = 120 @ 100 мA, 5 В, Icutoff-max = 100 нА, Uceo(sat), В @ Ic, Ib = 1 @ 50 мA, 500 мА, Тексп, °С = -55...+150,... Група товару: Транзистори Корпус: TO-92-3 Од. вим: шт
Anzahl je Verpackung: 2000 Stücke
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Technische Details KSC2316YTA ON Semiconductor

Description: TRANS NPN 120V 0.8A TO-92-3, Power - Max: 900 mW, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 800 mA, Part Status: Obsolete, Supplier Device Package: TO-92-3, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads, Packaging: Tape & Box (TB).

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KSC2316YTA KSC2316YTA Hersteller : onsemi ksc2316-d.pdf Description: TRANS NPN 120V 0.8A TO-92-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC2316YTA KSC2316YTA Hersteller : onsemi ksc2316-d.pdf Description: TRANS NPN 120V 0.8A TO-92-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC2316YTA KSC2316YTA Hersteller : onsemi / Fairchild KSC2316_D-2314418.pdf Bipolar Transistors - BJT NPN Epitaxial Transistor
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