KSC2785-GTA
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auf Bestellung 62500 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details KSC2785-GTA
Description: TRANS NPN 50V 0.15A TO92S, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Short Body, Packaging: Tape & Box (TB), Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Supplier Device Package: TO-92S, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO).
Weitere Produktangebote KSC2785-GTA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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KSC2785GTA | onsemi |
 Description: TRANS NPN 50V 0.15A TO92SVce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Tape & Box (TB) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: TO-92S Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KSC2785GTA |
|
Hersteller: onsemi
Description: TRANS NPN 50V 0.15A TO92S
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: TO-92S
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS NPN 50V 0.15A TO92S
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: TO-92S
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH