KSC5502TU ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 360+ | 1.86 EUR |
| 500+ | 1.64 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
360 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details KSC5502TU ON Semiconductor
Description: TRANS NPN 600V 2A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 500mA, 2.5V, Supplier Device Package: TO-220-3, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 50 W.
Weitere Produktangebote KSC5502TU nach Preis ab 1.15 EUR bis 4.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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KSC5502TU | ON Semiconductor |
 Trans GP BJT NPN 600V 2A 50000mW 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 784 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC5502TU | onsemi |
Bipolar Transistors - BJT NPN Planar Silicon |
auf Bestellung 4182 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC5502TU | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Planar Silicon |
auf Bestellung 4997 Stücke: Lieferzeit 10-14 Tag (e) |
|
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 |
KSC5502TU | onsemi |
Description: TRANS NPN 600V 2A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 500mA, 2.5V Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 50 W |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
|
| KSC5502TU |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 600V 2A 50000mW 3-Pin(3+Tab) TO-220 Tube
Trans GP BJT NPN 600V 2A 50000mW 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 360+ | 1.86 EUR |
| 500+ | 1.64 EUR |
| KSC5502TU |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Planar Silicon
Bipolar Transistors - BJT NPN Planar Silicon
auf Bestellung 4182 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.19 EUR |
| KSC5502TU |
|
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Planar Silicon
Bipolar Transistors - BJT NPN Planar Silicon
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 1.63 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.15 EUR |
| KSC5502TU |
|
Hersteller: onsemi
Description: TRANS NPN 600V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 500mA, 2.5V
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Description: TRANS NPN 600V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 500mA, 2.5V
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.38 EUR |
| 50+ | 2.12 EUR |
| 100+ | 1.9 EUR |