KSD1691YS
Produktcode: 179576
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Lieblingsprodukt
Hersteller:
Transistoren > Bipolar-Transistoren NPN
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Weitere Produktangebote KSD1691YS nach Preis ab 0.5 EUR bis 2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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KSD1691YS | ON Semiconductor |
Trans GP BJT NPN 60V 5A 1300mW 3-Pin TO-126 Bag |
auf Bestellung 33240 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD1691YS | onsemi |
Description: TRANS NPN 60V 5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD1691YS | onsemi |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSD1691YS |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 5A 1300mW 3-Pin TO-126 Bag
Trans GP BJT NPN 60V 5A 1300mW 3-Pin TO-126 Bag
auf Bestellung 33240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1147+ | 0.57 EUR |
| 10000+ | 0.5 EUR |
| KSD1691YS |
|
Hersteller: onsemi
Description: TRANS NPN 60V 5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Description: TRANS NPN 60V 5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.99 EUR |
| 17+ | 1.25 EUR |
| 100+ | 0.82 EUR |
| KSD1691YS |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Epitaxial Sil
Bipolar Transistors - BJT NPN Epitaxial Sil
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.65 EUR |
| 2000+ | 0.57 EUR |