
KSD471AGTA ON Semiconductor
auf Bestellung 11755 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
5465+ | 0.10 EUR |
10000+ | 0.09 EUR |
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Technische Details KSD471AGTA ON Semiconductor
Description: TRANS NPN 30V 1A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V, Frequency - Transition: 130MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW.
Weitere Produktangebote KSD471AGTA nach Preis ab 0.11 EUR bis 0.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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KSD471AGTA | Hersteller : onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
auf Bestellung 11755 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD471AGTA | Hersteller : ON Semiconductor / Fairchild |
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auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD471AGTA | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD471AGTA | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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KSD471AGTA | Hersteller : onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |