Technische Details KSD880O ON Semiconductor
Description: TRANS NPN 60V 3A TO-220-3, Power - Max: 30 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: TO-220-3, Frequency - Transition: 3MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Weitere Produktangebote KSD880O nach Preis ab 0.5 EUR bis 2.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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KSD880O | ON Semiconductor |
 Trans GP BJT NPN 60V 3A 30000mW 3-Pin(3+Tab) TO-220 Bag |
auf Bestellung 1242 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD880O | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 1050 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD880O | onsemi |
Description: TRANS NPN 60V 3A TO-220-3 Power - Max: 30 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD880O | ON Semiconductor |
Trans GP BJT NPN 60V 3A 30000mW 3-Pin(3+Tab) TO-220 Bag |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 111 Stücke Im Einkaufswagen Stück im Wert von UAH |
| KSD880O |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 3A 30000mW 3-Pin(3+Tab) TO-220 Bag
Trans GP BJT NPN 60V 3A 30000mW 3-Pin(3+Tab) TO-220 Bag
auf Bestellung 1242 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 347+ | 0.5 EUR |
| KSD880O |
|
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Sil
Bipolar Transistors - BJT NPN Epitaxial Sil
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.43 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.9 EUR |
| 600+ | 0.88 EUR |
| 1000+ | 0.73 EUR |
| KSD880O |
|
Hersteller: onsemi
Description: TRANS NPN 60V 3A TO-220-3
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: TRANS NPN 60V 3A TO-220-3
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 12+ | 1.76 EUR |
| KSD880O |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 3A 30000mW 3-Pin(3+Tab) TO-220 Bag
Trans GP BJT NPN 60V 3A 30000mW 3-Pin(3+Tab) TO-220 Bag
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)