KSD986YSTSSTU
Hersteller: auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details KSD986YSTSSTU
Description: TRANS NPN DARL 80V 1.5A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 8000 @ 1A, 2V, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W.
Weitere Produktangebote KSD986YSTSSTU
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KSD986YSTSSTU | Hersteller : onsemi |
Description: TRANS NPN DARL 80V 1.5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8000 @ 1A, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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KSD986YSTSSTU | Hersteller : Fairchild Semiconductor |
Description: TRANS NPN DARL 80V 1.5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8000 @ 1A, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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KSD986YSTSSTU | Hersteller : onsemi / Fairchild |
Darlington Transistors NPN Epitaxial Sil Darl |
Produkt ist nicht verfügbar |