KSP45TF Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: TRANS NPN 350V 0.3A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
auf Bestellung 140000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6662+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details KSP45TF Fairchild Semiconductor
Description: TRANS NPN 350V 0.3A TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 625 mW.
Weitere Produktangebote KSP45TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| KSP45TF | Hersteller : ONSEMI |
Description: ONSEMI - KSP45TF - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 140000 Stücke: Lieferzeit 14-21 Tag (e) |
||
 |
KSP45TF | Hersteller : ON Semiconductor |
Trans GP BJT NPN 350V 0.3A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
|
 |
KSP45TF | Hersteller : onsemi |
Description: TRANS NPN 350V 0.3A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |