Technische Details LA733P ON
Description: RF SMALL SIGNAL BIPOLAR TRANSIST, Part Status: Obsolete, Supplier Device Package: TO-92 (TO-226), Frequency - Transition: 450MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V, Voltage - Collector Emitter Breakdown (Max): 48V, Current - Collector (Ic) (Max): 100mA, Power - Max: 625mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Bulk.
Weitere Produktangebote LA733P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
LA733P | onsemi |
Description: RF SMALL SIGNAL BIPOLAR TRANSIST Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 450MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Voltage - Collector Emitter Breakdown (Max): 48V Current - Collector (Ic) (Max): 100mA Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LA733P | onsemi |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LA733P |
Hersteller: onsemi
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 48V
Current - Collector (Ic) (Max): 100mA
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 450MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 48V
Current - Collector (Ic) (Max): 100mA
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

