Technische Details LET9120 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 80V; 18A; 200W; M246; Pout: 150W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 18A, Power dissipation: 200W, Case: M246, Kind of package: bulk, Kind of channel: enhancement, Kind of transistor: RF, Mechanical mounting: screw, Open-loop gain: 18dB, Efficiency: 70%, Output power: 150W, Frequency: 860MHz, Electrical mounting: FASTON connectors; soldering; THT.
Weitere Produktangebote LET9120
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LET9120 | Hersteller : STMicroelectronics |
Trans RF MOSFET N-CH 80V 18A 5-Pin Case M-246 Loose |
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LET9120 | Hersteller : STMicroelectronics |
Description: RF MOSFET LDMOS 32V M246Packaging: Tray Package / Case: M246 Current Rating (Amps): 18A Frequency: 860MHz Power - Output: 150W Gain: 18dB Technology: LDMOS Supplier Device Package: M246 Voltage - Rated: 80 V Voltage - Test: 32 V Current - Test: 400 mA |
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| LET9120 | Hersteller : STMicroelectronics |
RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz |
Produkt ist nicht verfügbar |
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| LET9120 | Hersteller : STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; RF; 80V; 18A; 200W; M246; Pout: 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 18A Power dissipation: 200W Case: M246 Kind of package: bulk Kind of channel: enhancement Kind of transistor: RF Mechanical mounting: screw Open-loop gain: 18dB Efficiency: 70% Output power: 150W Frequency: 860MHz Electrical mounting: FASTON connectors; soldering; THT |
Produkt ist nicht verfügbar |
