Produkte > LITTELFUSE > LFUSCD04065A
LFUSCD04065A

LFUSCD04065A Littelfuse


Littelfuse_Power_Semiconductor_Silicon_Carbide_LFU-1372466.pdf
Hersteller: Littelfuse
Schottky Diodes & Rectifiers 650 V, 4 A 2-lead SiC
auf Bestellung 435 Stücke:

Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details LFUSCD04065A Littelfuse

Description: DIODE SIL CARB 650V 4A TO220AC, Current - Reverse Leakage @ Vr: 170 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 125pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.

Weitere Produktangebote LFUSCD04065A

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
LFUSCD04065A LFUSCD04065A Hersteller : Littelfuse Inc. media?resourcetype=datasheets&itemid=94bf8b41-8ca3-4ae5-be98-fb6b01085dbb&filename=littelfuse_power_semiconductor_silicon_carbide_lfuscd04065a_datasheet.pdf Description: DIODE SIL CARB 650V 4A TO220AC
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH