Technische Details LGD18N40ATH Littelfuse
Category: SMD IGBT transistors, Description: Transistor: IGBT; 400V; 18A; 115W; DPAK, Type of transistor: IGBT, Collector-emitter voltage: 400V, Collector current: 18A, Power dissipation: 115W, Case: DPAK, Gate-emitter voltage: ±18V, Pulsed collector current: 50A, Mounting: SMD, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate; logic level, Application: automotive industry; ignition systems, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote LGD18N40ATH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| LGD18N40ATH | Hersteller : LITTELFUSE |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 18A; 115W; DPAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 18A Power dissipation: 115W Case: DPAK Gate-emitter voltage: ±18V Pulsed collector current: 50A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: automotive industry; ignition systems Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
| LGD18N40ATH | Hersteller : Littelfuse Inc. | Description: IGBT 430V 15A 115W DPAK-3 |
Produkt ist nicht verfügbar |
||
 |
LGD18N40ATH | Hersteller : IXYS |
IGBT Transistors DPAK, IGBT3 |
Produkt ist nicht verfügbar |
|
| LGD18N40ATH | Hersteller : LITTELFUSE |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 18A; 115W; DPAK Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 18A Power dissipation: 115W Case: DPAK Gate-emitter voltage: ±18V Pulsed collector current: 50A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: automotive industry; ignition systems |
Produkt ist nicht verfügbar |