Technische Details LGD8201ATI Littelfuse
Description: IGBT 440V 20A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 1.5µs/8µs, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 440 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 125 W, Qualification: AEC-Q101.
Weitere Produktangebote LGD8201ATI
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| LGD8201ATI | Hersteller : LITTELFUSE |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems Application: ignition systems Collector-emitter voltage: 400V Gate-emitter voltage: ±15V Collector current: 20A Pulsed collector current: 50A Type of transistor: IGBT Power dissipation: 125W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Mounting: SMD Case: DPAK Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| LGD8201ATI | Hersteller : Littelfuse Inc. |
Description: IGBT 440V 20A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 1.5µs/8µs Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 50 A Power - Max: 125 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| LGD8201ATI | Hersteller : LITTELFUSE |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems Application: ignition systems Collector-emitter voltage: 400V Gate-emitter voltage: ±15V Collector current: 20A Pulsed collector current: 50A Type of transistor: IGBT Power dissipation: 125W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Mounting: SMD Case: DPAK |
Produkt ist nicht verfügbar |