LGD8209TI LITTELFUSE

Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 12A; 94W; DPAK; Features: logic level; ESD
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Collector current: 12A
Gate-emitter voltage: ±15V
Pulsed collector current: 30A
Power dissipation: 94W
Collector-emitter voltage: 410V
Case: DPAK
Version: ESD
Anzahl je Verpackung: 2500 Stücke
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Technische Details LGD8209TI LITTELFUSE
Category: SMD IGBT transistors, Description: Transistor: IGBT; 410V; 12A; 94W; DPAK; Features: logic level; ESD, Mounting: SMD, Type of transistor: IGBT, Application: ignition systems, Features of semiconductor devices: logic level, Kind of package: reel; tape, Collector current: 12A, Gate-emitter voltage: ±15V, Pulsed collector current: 30A, Power dissipation: 94W, Collector-emitter voltage: 410V, Case: DPAK, Version: ESD, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote LGD8209TI
Foto | Bezeichnung | Hersteller | Beschreibung |
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LGD8209TI | Hersteller : LITTELFUSE |
![]() Description: Transistor: IGBT; 410V; 12A; 94W; DPAK; Features: logic level; ESD Mounting: SMD Type of transistor: IGBT Application: ignition systems Features of semiconductor devices: logic level Kind of package: reel; tape Collector current: 12A Gate-emitter voltage: ±15V Pulsed collector current: 30A Power dissipation: 94W Collector-emitter voltage: 410V Case: DPAK Version: ESD |
Produkt ist nicht verfügbar |