LGD8209TI LITTELFUSE
Hersteller: LITTELFUSECategory: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 12A; 94W; DPAK; ignition systems
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Application: ignition systems
Power dissipation: 94W
Features of semiconductor devices: ESD protected gate; logic level
Collector-emitter voltage: 410V
Gate-emitter voltage: ±15V
Collector current: 12A
Pulsed collector current: 30A
Type of transistor: IGBT
Anzahl je Verpackung: 2500 Stücke
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Technische Details LGD8209TI LITTELFUSE
Category: SMD IGBT transistors, Description: Transistor: IGBT; 410V; 12A; 94W; DPAK; ignition systems, Mounting: SMD, Case: DPAK, Kind of package: reel; tape, Application: ignition systems, Power dissipation: 94W, Features of semiconductor devices: ESD protected gate; logic level, Collector-emitter voltage: 410V, Gate-emitter voltage: ±15V, Collector current: 12A, Pulsed collector current: 30A, Type of transistor: IGBT, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote LGD8209TI
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| LGD8209TI | Hersteller : LITTELFUSE |
Category: SMD IGBT transistors Description: Transistor: IGBT; 410V; 12A; 94W; DPAK; ignition systems Mounting: SMD Case: DPAK Kind of package: reel; tape Application: ignition systems Power dissipation: 94W Features of semiconductor devices: ESD protected gate; logic level Collector-emitter voltage: 410V Gate-emitter voltage: ±15V Collector current: 12A Pulsed collector current: 30A Type of transistor: IGBT |
Produkt ist nicht verfügbar |