LGD8209TI LITTELFUSE

Category: SMD IGBT transistors, Description: Transistor: IGBT; 410V; 12A; 94W; DPAK; Features: logic level; ESD, Type of transistor: IGBT, Collector-emitter voltage: 410V, Collector current: 12A, Power dissipation: 94W, Case: DPAK, Gate-emitter voltage: ±15V, Pulsed collector current: 30A, Mounting: SMD, Kind of package: reel; tape, Features of semiconductor devices: logic level, Application: ignition systems, Version: ESD, Anzahl je Verpackung: 2500 Stücke.