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LGE2305

LGE2305 LUGUANG ELECTRONIC

LGE2305v2.pdf
Hersteller: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.8nC
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Technische Details LGE2305 LUGUANG ELECTRONIC

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -4.1A, Power dissipation: 1.7W, Case: SOT23, Gate-source voltage: ±8V, On-state resistance: 75mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 7.8nC.