Technische Details LL4001G L0G Taiwan Semiconductor
Description: DIODE GEN PURP 50V 1A MELF, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: MELF, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF, Packaging: Tape & Reel (TR).
Weitere Produktangebote LL4001G L0G
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LL4001G L0G | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 50V 1A MELFCurrent - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: MELF Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Packaging: Tape & Reel (TR) |
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