LL4002G L0G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Description: TAIWAN SEMICONDUCTOR - LL4002G L0G - Diode mit Standard-Erholzeit, 100 V, 1 A, Einfach, 1.1 V, 30 A
Bauform - Diode: MELF
Durchlassstoßstrom: 30
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 1.1
Sperrverzögerungszeit: -
Durchschnittlicher Durchlassstrom: 1
Wiederkehrende Spitzensperrspannung: 100
Anzahl der Pins: -
Produktpalette: LL400xG L0G
Betriebstemperatur, max.: 150
SVHC: No SVHC (08-Jul-2021)
| Anzahl | Privatkunde |
|---|---|
| 486+ | 0.51 EUR |
| 592+ | 0.39 EUR |
| 827+ | 0.26 EUR |
| 1037+ | 0.2 EUR |
| 1273+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details LL4002G L0G TAIWAN SEMICONDUCTOR
Description: DIODE GEN PURP 100V 1A MELF, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: MELF, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF, Packaging: Tape & Reel (TR).
Weitere Produktangebote LL4002G L0G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
LL4002G L0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A MELF Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: MELF Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LL4002G L0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A MELF
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 1A MELF
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH