LL4002G L0G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A MELF
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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Technische Details LL4002G L0G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A MELF, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: MELF, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF, Packaging: Tape & Reel (TR).