LL5817 L0G

LL5817 L0G TAIWAN SEMICONDUCTOR


LL5817 SERIES_I2006.pdf
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 25A
Kind of package: reel; tape
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
180+0.4 EUR
500+0.35 EUR
Mindestbestellmenge: 157
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Technische Details LL5817 L0G TAIWAN SEMICONDUCTOR

Description: DIODE SCHOTTKY 20V 1A MELF, Current - Reverse Leakage @ Vr: 500 µA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 20 V, Operating Temperature - Junction: -65°C ~ 125°C, Supplier Device Package: MELF, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 110pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF, Packaging: Tape & Reel (TR).

Weitere Produktangebote LL5817 L0G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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LL5817 L0G LL5817 L0G Hersteller : Taiwan Semiconductor Corporation LL5817 SERIES_I2006.pdf Description: DIODE SCHOTTKY 20V 1A MELF
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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LL5817 L0G LL5817 L0G Hersteller : Taiwan Semiconductor LL5817 SERIES_I2006.pdf Schottky Diodes & Rectifiers 20V, 1A, Schottky Rectifier
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