LM5101ASD/NOPB Texas Instruments
Hersteller: Texas InstrumentsDriver 3A 2-OUT High and Low Side Half Brdg Non-Inv 10-Pin WSON EP T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.72 EUR |
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Technische Details LM5101ASD/NOPB Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 10WSON, Packaging: Tape & Reel (TR), Package / Case: 10-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 9V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 118 V, Supplier Device Package: 10-WSON (4x4), Rise / Fall Time (Typ): 430ns, 260ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 2.3V, -, Current - Peak Output (Source, Sink): 3A, 3A, Part Status: Active, DigiKey Programmable: Not Verified.
Weitere Produktangebote LM5101ASD/NOPB nach Preis ab 3.56 EUR bis 6.69 EUR
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LM5101ASD/NOPB | Hersteller : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 430ns, 260ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 2.3V, - Current - Peak Output (Source, Sink): 3A, 3A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM5101ASD/NOPB | Hersteller : Texas Instruments |
Gate Drivers 3A HI VOLT HI-SIDE L OW-SIDE GATE DRIVER A 926-LM5101ASDX/NOPB |
auf Bestellung 1169 Stücke: Lieferzeit 10-14 Tag (e) |
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LM5101ASD/NOPB | Hersteller : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 10WSON Packaging: Cut Tape (CT) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 430ns, 260ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 2.3V, - Current - Peak Output (Source, Sink): 3A, 3A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3234 Stücke: Lieferzeit 10-14 Tag (e) |
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LM5101ASD/NOPB | Hersteller : Texas Instruments |
Driver 3A 2-OUT High and Low Side Half Brdg 10-Pin WSON EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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LM5101ASD/NOPB | Hersteller : Texas Instruments |
Driver 3A 2-OUT High and Low Side Half Brdg Non-Inv 10-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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LM5101ASD/NOPB | Hersteller : Texas Instruments |
Driver 3A 2-OUT High and Low Side Half Brdg Non-Inv 10-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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LM5101ASD/NOPB | Hersteller : Texas Instruments |
Driver 3A 2-OUT High and Low Side Half Brdg Non-Inv 10-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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| LM5101ASD/NOPB | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Output current: -3...3A Case: WSON10 Mounting: SMD Number of channels: 2 Operating temperature: -40...125°C Supply voltage: 9...14V DC Impulse rise time: 430ns Pulse fall time: 260ns Protection: undervoltage UVP Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| LM5101ASD/NOPB | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Output current: -3...3A Case: WSON10 Mounting: SMD Number of channels: 2 Operating temperature: -40...125°C Supply voltage: 9...14V DC Impulse rise time: 430ns Pulse fall time: 260ns Protection: undervoltage UVP |
Produkt ist nicht verfügbar |