LM5113QDPRRQ1 Texas Instruments
auf Bestellung 2075 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.99 EUR |
| 10+ | 5.32 EUR |
| 25+ | 4.89 EUR |
| 100+ | 4.42 EUR |
| 250+ | 4.21 EUR |
| 500+ | 4.07 EUR |
| 1000+ | 3.96 EUR |
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Technische Details LM5113QDPRRQ1 Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 10WSON, Packaging: Tape & Reel (TR), Package / Case: 10-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4.5V ~ 5.5V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 100 V, Supplier Device Package: 10-WSON (4x4), Rise / Fall Time (Typ): 7ns, 3.5ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Current - Peak Output (Source, Sink): 1.2A, 5A, DigiKey Programmable: Not Verified, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote LM5113QDPRRQ1 nach Preis ab 4.3 EUR bis 7.16 EUR
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
 Description: IC GATE DRVR HALF-BRIDGE 10WSONPackaging: Cut Tape (CT) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 7ns, 3.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 1.2A, 5A DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 414 Stücke: Lieferzeit 10-14 Tag (e) |
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
Driver 5A 2-OUT High Side/Low Side Full Brdg/Half Brdg Inv/Non-Inv 10-Pin WSON EP T/R Automotive AEC-Q100 |
Produkt ist nicht verfügbar |
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
Driver 5A 2-OUT High Side/Low Side Full Brdg/Half Brdg Inv/Non-Inv 10-Pin WSON EP T/R Automotive AEC-Q100 |
Produkt ist nicht verfügbar |
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
Driver 5A 2-OUT High and Low Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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| LM5113QDPRRQ1 | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; WSON10; -5÷1.2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: WSON10 Output current: -5...1.2A Number of channels: 2 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 7ns Pulse fall time: 3.5ns Protection: undervoltage UVP Anzahl je Verpackung: 4500 Stücke |
Produkt ist nicht verfügbar |
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 7ns, 3.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 1.2A, 5A DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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| LM5113QDPRRQ1 | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; WSON10; -5÷1.2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: WSON10 Output current: -5...1.2A Number of channels: 2 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 7ns Pulse fall time: 3.5ns Protection: undervoltage UVP |
Produkt ist nicht verfügbar |