LMG3526R030RQSR Texas Instruments
Hersteller: Texas InstrumentsDescription: 650-V 30-M GAN FET WITH INTEGRAT
Packaging: Cut Tape (CT)
Package / Case: 52-VQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: MOSFET
Configuration: Half Bridge Inverter
Current: 55 A
Voltage: 650 V
auf Bestellung 1856 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 43.44 EUR |
| 10+ | 40.06 EUR |
| 25+ | 38.26 EUR |
| 100+ | 34.21 EUR |
| 250+ | 32.63 EUR |
| 500+ | 31.06 EUR |
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Technische Details LMG3526R030RQSR Texas Instruments
Category: Drivers - integrated circuits, Description: IC: PMIC; GaN; thermal protection; 650V; 55A, Technology: GaN, Drain-source voltage: 650V, Drain current: 55A, On-state resistance: 30mΩ, Type of integrated circuit: PMIC, Operating temperature: -40...150°C, Integrated circuit features: thermal protection.
Weitere Produktangebote LMG3526R030RQSR
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LMG3526R030RQSR | Hersteller : Texas Instruments |
Description: 650-V 30-M GAN FET WITH INTEGRAT Packaging: Tape & Reel (TR) Package / Case: 52-VQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: MOSFET Configuration: Half Bridge Inverter Current: 55 A Voltage: 650 V |
Produkt ist nicht verfügbar |
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LMG3526R030RQSR | Hersteller : Texas Instruments |
MOSFET 650-V 30-m? GaN FET with integrated driver, protection and zero-voltage detection 52-VQFN -40 to 150 |
Produkt ist nicht verfügbar |
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| LMG3526R030RQSR | Hersteller : TEXAS INSTRUMENTS |
Category: Drivers - integrated circuits Description: IC: PMIC; GaN; thermal protection; 650V; 55A Technology: GaN Drain-source voltage: 650V Drain current: 55A On-state resistance: 30mΩ Type of integrated circuit: PMIC Operating temperature: -40...150°C Integrated circuit features: thermal protection |
Produkt ist nicht verfügbar |