| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.95 EUR |
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Technische Details LSIC1MO170E0750 IXYS
Description: SICFET N-CH 1700V 750OHM TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V.
Weitere Produktangebote LSIC1MO170E0750 nach Preis ab 7.34 EUR bis 15.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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LSIC1MO170E0750 | Littelfuse Inc. |
Description: SICFET N-CH 1700V 750OHM TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V |
auf Bestellung 247 Stücke: Lieferzeit 10-14 Tag (e) |
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LSIC1MO170E0750 | Littelfuse |
MOSFET SIC MOSFET 1700V 750MO |
auf Bestellung 2221 Stücke: Lieferzeit 10-14 Tag (e) |
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| LSIC1MO170E0750 |
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Hersteller: Littelfuse Inc.
Description: SICFET N-CH 1700V 750OHM TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
Description: SICFET N-CH 1700V 750OHM TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.74 EUR |
| 30+ | 8.66 EUR |
| 120+ | 7.34 EUR |
| LSIC1MO170E0750 |
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Hersteller: Littelfuse
MOSFET SIC MOSFET 1700V 750MO
MOSFET SIC MOSFET 1700V 750MO
auf Bestellung 2221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.57 EUR |
| 10+ | 13.34 EUR |
| 25+ | 12.67 EUR |
| 100+ | 11.13 EUR |
| 250+ | 10.75 EUR |
| 450+ | 9.76 EUR |
| 900+ | 8.77 EUR |




