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Technische Details LSIC1MO170T0750 IXYS
Description: SICFET N-CH 1700V 6.4A TO263-7L, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-263-7L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V.
Weitere Produktangebote LSIC1MO170T0750 nach Preis ab 9.12 EUR bis 19.33 EUR
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LSIC1MO170T0750 | Littelfuse Inc. |
 Description: SICFET N-CH 1700V 6.4A TO263-7LPackaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263-7L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V |
auf Bestellung 853 Stücke: Lieferzeit 10-14 Tag (e) |
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LSIC1MO170T0750 | Littelfuse |
MOSFET 1700V/750MOHM SIC MOSFET |
auf Bestellung 4924 Stücke: Lieferzeit 10-14 Tag (e) |
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| LSIC1MO170T0750 |
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Hersteller: Littelfuse Inc.
Description: SICFET N-CH 1700V 6.4A TO263-7L
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
Description: SICFET N-CH 1700V 6.4A TO263-7L
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
auf Bestellung 853 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.36 EUR |
| 50+ | 9.72 EUR |
| 100+ | 9.12 EUR |
| LSIC1MO170T0750 |
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Hersteller: Littelfuse
MOSFET 1700V/750MOHM SIC MOSFET
MOSFET 1700V/750MOHM SIC MOSFET
auf Bestellung 4924 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.33 EUR |
| 10+ | 16.56 EUR |
| 50+ | 15.68 EUR |
| 100+ | 13.84 EUR |
| 500+ | 12.23 EUR |
| 1000+ | 10.95 EUR |
| 2500+ | 10.45 EUR |