Technische Details LSIC2SD120C08 Littelfuse
Description: DIODE SIC 1.2KV 24.5A TO252L, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 454pF @ 1V, 1MHz, Current - Average Rectified (Io): 24.5A, Supplier Device Package: TO-252-2L (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote LSIC2SD120C08
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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LSIC2SD120C08 | Littelfuse Inc. |
Description: DIODE SIC 1.2KV 24.5A TO252LPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 454pF @ 1V, 1MHz Current - Average Rectified (Io): 24.5A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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LSIC2SD120C08 | Littelfuse Inc. |
Description: DIODE SIC 1.2KV 24.5A TO252LPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 454pF @ 1V, 1MHz Current - Average Rectified (Io): 24.5A Supplier Device Package: TO-252-2L (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
LSIC2SD120C08 | LITTELFUSE |
Description: LITTELFUSE - LSIC2SD120C08 - SiC-Schottky-Diode, Einfach, 1.2 kV, 24.5 A, 47 nC, TO-252 (DPAK)SVHC: No SVHC (16-Jul-2019) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| LSIC2SD120C08 |
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Hersteller: Littelfuse Inc.
Description: DIODE SIC 1.2KV 24.5A TO252L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE SIC 1.2KV 24.5A TO252L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LSIC2SD120C08 |
![]() |
Hersteller: Littelfuse Inc.
Description: DIODE SIC 1.2KV 24.5A TO252L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE SIC 1.2KV 24.5A TO252L
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 454pF @ 1V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2L (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LSIC2SD120C08 |
![]() |
Hersteller: LITTELFUSE
Description: LITTELFUSE - LSIC2SD120C08 - SiC-Schottky-Diode, Einfach, 1.2 kV, 24.5 A, 47 nC, TO-252 (DPAK)
SVHC: No SVHC (16-Jul-2019)
Description: LITTELFUSE - LSIC2SD120C08 - SiC-Schottky-Diode, Einfach, 1.2 kV, 24.5 A, 47 nC, TO-252 (DPAK)
SVHC: No SVHC (16-Jul-2019)
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH


