LSIC2SD120D15 Littelfuse
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.99 EUR |
| 10+ | 20.19 EUR |
| 25+ | 19.37 EUR |
| 50+ | 18.74 EUR |
| 100+ | 17.06 EUR |
| 250+ | 16.23 EUR |
| 500+ | 15.16 EUR |
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Technische Details LSIC2SD120D15 Littelfuse
Description: DIODE SIL CARB 1200V 44A TO2632L, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 920pF @ 1V, 1MHz, Current - Average Rectified (Io): 44A, Supplier Device Package: TO-263-2L, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote LSIC2SD120D15
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
LSIC2SD120D15 | Littelfuse Inc. |
Description: DIODE SIL CARB 1200V 44A TO2632LPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 920pF @ 1V, 1MHz Current - Average Rectified (Io): 44A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| LSIC2SD120D15 |
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Hersteller: Littelfuse Inc.
Description: DIODE SIL CARB 1200V 44A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 920pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE SIL CARB 1200V 44A TO2632L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 920pF @ 1V, 1MHz
Current - Average Rectified (Io): 44A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH



