LSIC2SD120D20A Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: DIODE SIL CARB 1200V 55A TO2632L
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1310pF @ 1V, 1MHz
Current - Average Rectified (Io): 55A
Supplier Device Package: TO-263-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 20.30 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details LSIC2SD120D20A Littelfuse Inc.
Description: DIODE SIL CARB 1200V 55A TO2632L, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1310pF @ 1V, 1MHz, Current - Average Rectified (Io): 55A, Supplier Device Package: TO-263-2L, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote LSIC2SD120D20A nach Preis ab 20.30 EUR bis 35.50 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
LSIC2SD120D20A | Hersteller : Littelfuse Inc. |
Description: DIODE SIL CARB 1200V 55A TO2632L Packaging: Cut Tape (CT) Part Status: Active Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1310pF @ 1V, 1MHz Current - Average Rectified (Io): 55A Supplier Device Package: TO-263-2L Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 1538 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| LSIC2SD120D20A | Hersteller : LITTELFUSE |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; 108W Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 2.1V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 0.145kA Application: automotive industry Power dissipation: 108W Type of diode: Schottky rectifying Manufacturer series: LSIC2SD Mounting: SMD Case: TO263 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
| LSIC2SD120D20A | Hersteller : Littelfuse |
Schottky Diodes & Rectifiers SiC Schottky Diode 1200V 20A TO263-2L |
Produkt ist nicht verfügbar |
||||||||||
| LSIC2SD120D20A | Hersteller : LITTELFUSE |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 20A; 108W Technology: SiC Max. off-state voltage: 1.2kV Max. forward voltage: 2.1V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 0.145kA Application: automotive industry Power dissipation: 108W Type of diode: Schottky rectifying Manufacturer series: LSIC2SD Mounting: SMD Case: TO263 |
Produkt ist nicht verfügbar |