M1F45M12W2-1LA STMicroelectronics
Hersteller: STMicroelectronics
Discrete Semiconductor Modules Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V 47.5 mOhm
Discrete Semiconductor Modules Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V 47.5 mOhm
auf Bestellung 35 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 122.41 EUR |
| 11+ | 109.07 EUR |
| 22+ | 102.54 EUR |
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Technische Details M1F45M12W2-1LA STMicroelectronics
Description: AUTOMOTIVE-GRADE ACEPACK DMT-32, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.264", 32.10mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V, Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V, Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: ACEPACK DMT-32.
Weitere Produktangebote M1F45M12W2-1LA nach Preis ab 108.29 EUR bis 121.52 EUR
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| M1F45M12W2-1LA | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE ACEPACK DMT-32 Packaging: Tube Package / Case: 32-PowerDIP Module (1.264", 32.10mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ACEPACK DMT-32 |
auf Bestellung 70 Stücke: Lieferzeit 21-28 Tag (e) |
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