M1F45M12W2-1LA STMicroelectronics
Hersteller: STMicroelectronics
Discrete Semiconductor Modules Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V 47.5 mOhm
| Anzahl | Privatkunde |
|---|---|
| 1+ | 98.6 EUR |
| 11+ | 87.86 EUR |
| 22+ | 82.6 EUR |
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Technische Details M1F45M12W2-1LA STMicroelectronics
Description: AUTOMOTIVE-GRADE ACEPACK DMT-32, Packaging: Tube, Package / Case: 32-PowerDIP Module (1.264", 32.10mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V, Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V, Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: ACEPACK DMT-32.
Weitere Produktangebote M1F45M12W2-1LA nach Preis ab 87.24 EUR bis 97.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| M1F45M12W2-1LA | STMicroelectronics |
Description: AUTOMOTIVE-GRADE ACEPACK DMT-32 Packaging: Tube Package / Case: 32-PowerDIP Module (1.264", 32.10mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ACEPACK DMT-32 |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
|
| M1F45M12W2-1LA |
Hersteller: STMicroelectronics
Description: AUTOMOTIVE-GRADE ACEPACK DMT-32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V
Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ACEPACK DMT-32
Description: AUTOMOTIVE-GRADE ACEPACK DMT-32
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V
Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ACEPACK DMT-32
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 97.89 EUR |
| 11+ | 87.24 EUR |