MBR10150CTH Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 2.29 EUR |
| 10+ | 1.43 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.62 EUR |
| 2500+ | 0.61 EUR |
| 5000+ | 0.6 EUR |
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Technische Details MBR10150CTH Taiwan Semiconductor
Description: DIODE ARR SCHOT 150V 10A TO220AB, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220AB, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Current - Reverse Leakage @ Vr: 100 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote MBR10150CTH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBR10150CTH | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 150V 10A TO220AB Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Qualification: AEC-Q101 Grade: Automotive |
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