
MBR10H100CT Taiwan Semiconductor
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.01 EUR |
10+ | 1.50 EUR |
50+ | 1.27 EUR |
100+ | 1.09 EUR |
500+ | 0.92 EUR |
1000+ | 0.75 EUR |
2000+ | 0.71 EUR |
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Technische Details MBR10H100CT Taiwan Semiconductor
Description: DIODE ARR SCHOT 100V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote MBR10H100CT
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MBR10H100CT |
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auf Bestellung 22400 Stücke: Lieferzeit 21-28 Tag (e) |
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MBR10H100CT | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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MBR10H100CT | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V |
Produkt ist nicht verfügbar |